| PART |
Description |
Maker |
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HM5164165F HM5164165FJ-6 HM5165165FJ-6 HM5164165FJ |
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 6400 EDO公司的DRAM Mword x 16位）8K的refresh/4k刷新
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29LV651UE12TR MBM29LV651UE90TR MBM29LV651UE-12 |
64M (4M x 16) BIT 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
64M (4M x 16) BIT 64M号（4米16）位
AGM3224D equivalent, 320 x 240 pixel format 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
DC-DC Converter; Supply Voltage:12V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:20W; Mounting Type:PC Board; Series:WPN20R
320 x 240 pixel format, LED or CFL Backlight
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Component Limit...
|
| MB82DP04184E-65LTBG MB82DP04184E-65L |
64M Bit (4 M word 】 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
| MX23L6410 23L6410 |
64M-BIT Mask ROM (8/16 Bit Output)
From old datasheet system
|
Macronix 旺宏
|
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范
|
NEC Corp.
PerkinElmer, Inc.
|
| MX29LV320MTXI-70G MX29LV641MLTI-90 MX29LV640MLTC-9 |
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 6400位单电压3V时仅均匀部门闪存
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Macronix International Co., Ltd.
|
| MC-4R64CPE6C-653 MC-4R64CPE6C-745 MC-4R64CPE6C MC- |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus?/a> DRAM RIMM?/a> Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 64M-BYTE (32M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| UPD29F064115GZ-DB80X-MJH UPD29F064115GZ-DB85X-MJH |
64M-bit(4M-wordx16-bit)Flash memory
|
NEC
|
| M390S6450BT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 |
64M-bit Synchronous DRAM 4-bank/ LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
